BUL804 transistor equivalent, high voltage fast-switching npn power transistor.
* NPN Transistor
* High voltage capability
* Low spread of dynamic parameters
)
* Minimum lot-to-lot spread for reliable operation t(s
* Very high sw.
Pro t(s)
* Electronic ballast for fluorescent lighting te c
* Dedicated for PFC solution in half-bridge le uvoltag.
lete ucThe device is manufactured using high voltage dMulti-Epitaxial Planar technology for high so roswitching speeds and medium voltage capability. b PIt uses a Cellular Emitter structure with planar - O teedge termination to enhance switching spee.
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