BUL810 transistor equivalent, npn transistor.
* High voltage capability
* Low spread of dynamic parameters
* Low base-drive requirements
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* Very high switching speed t(s
* Fully characterized at.
ro
* Electronic transformer for halogen lamps P
* Electronic ballast for fluorescent lighting te
* Switch mode .
ObThe BUL810 is manufactured using high voltage -multiepitaxial mesa technology for cost-effective )high performance. It uses a hollow emitter t(sstructure to enhance switching speeds. cThe BUL series is designed for use in lighting duapplications an.
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