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BULK118 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

General Description

The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® BULK118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s BULK118 IS REVERSE PINS OUT Vs STANDARD SOT-82 PACKAGE AND SAME PINS OUT Vs BULT118 (SOT-32 PACKAGE) s STMicroelectronics PREFERRED SALESTYPES s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.