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STMicroelectronics Electronic Components Datasheet

BUZ45 Datasheet

N-Channel MOSFET

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BUZ45
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
I
BUZ45
I
Voss
500 V
ROS(on)
0.6 0
10
9.6 A
• HIGH VOLTAGE - FOR OFF-LINE SMPS
• ULTRA FAST SWITCHING FOR OPERATION
AT<100KHz
• EASY DRIVE - FOR REDUCED COST AND
SIZE
INDUSTRIAL APPLICATIONS:
• SWITCH MODE POWER SUPPLIES
• MOTOR CONTROLS
N - channel enhancement mode POWER MOS field
effect transistor. Easy drive and very fast switch-
ing times make this POWER MOS transistor ideal
for high speed switching applications.
Typical applications include switching power sup-
plies and motor speed control.
TO-3
INTERNAL SCHEMATIC
DIAGRAM
5
ABSOLUTE MAXIMUM RATINGS
Vos
VOGR
VGS
10
10M
Ptot
Tstg
Tj
Drain-source voltage (VGS =0)
Drain-gate voltage (RGS =20 KO)
Gate-source voltage
Drain current (continuous) Tc =25°C
Drain current (pulsed)
Total dissipation at Tc <25°C
Storage temperature
Max. operating junction temperature
DIN humidity category (DIN 40040)
IEC climatic category (DIN IEC 68-1)
June 1988
500
500
±20
9.6
38
125
-55 to 150
150
C
55/150/56
V
V
V
A
A
W
°C
°C
1/4
207


STMicroelectronics Electronic Components Datasheet

BUZ45 Datasheet

N-Channel MOSFET

No Preview Available !

BUZ45
THERMAL DATA
Rthj _case Thermal resistance junction-case
Rthj _amb Thermal resistance junction-ambient
max
max
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameters
Test Conditions
1.0 °C/W
35 °C/W
OFF
V(BR) oss Drain-source
breakdown voltage
10= 250 p,A
loss Zero gate voltage
Vos= Max Rating
drain current (VGS = 0) Vos= Max Rating
IGSS Gate-body leakage
current (Vos = 0)
VGs= ±20 V
VGs= 0
Tj = 125°C
500
V
250 p,A
1000 p,A
±100 nA
ON
VGS(th) Gate threshold
voltage
Ros (on) Static drain-source
on resistance
Vos= VGS
VGs= 10 V
10= 1 rnA
10= 5 A
2.1
4V
0.6 Q
DYNAMIC
gfs Forward
transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Vos= 25 V
Vos= 25 V
VGs= 0
10= 5 A
2.7
f= 1 MHz
mho
4900
400
170
pF
pF
pF
SWITCHING
td (on)
tr
td (off)
tf
Turn-on time
Rise time
Turn-off delay time
Fall time
Voo= 30 V
RGs= 50 Q
10= 2.8 A
VGS= 10 V
75 ns
120 ns
430 ns
140 ns
_______________2/_4_____________ ~ ~~~~m?::~~
208


Part Number BUZ45
Description N-Channel MOSFET
Maker STMicroelectronics
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BUZ45 Datasheet PDF






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