| Part Number | BUZ45 |
|---|---|
| Manufacturer | Intersil |
| Overview |
BUZ45
Semiconductor
Data Sheet
October 1998
File Number 2257.1
9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET
Features
• 9.6A, 500V
[ /Title IThis is an N-Channel enhancement mode silicon gate • .
* 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate * rDS(ON) = 0.600Ω (BUZ45) power field effect transistor designed for applications such * SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers, * Nanosecond Switching Speeds (9. |
BUZ45 Datasheet
The BUZ45 is a N-Channel Power MOSFET.
| Part Number | BUZ45 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | STMicroelectronics |
| Overview | BUZ45 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE I BUZ45 I Voss 500 V ROS(on) 0.6 0 10 9.6 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT<100KHz • EASY D. A 38 A 125 W -55 to 150 °C 150 °C C 55/150/56 1/4 207 BUZ45 THERMAL DATA Rthj _case Thermal resistance junction-case max Rthj _amb Thermal resistance junction-ambient max ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters Test Conditions 1.0 °C/W 35 . |
| Part Number | BUZ45 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
BUZ45
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.6Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-t.
*Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) *SOA is Power Dissipation Limited *High speed switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION Designed for applications such as switching regulators, switching converters, motor driver. |