BUZ45 Datasheet | Intersil

Semiconductor Data Sheet October 1998 File Number 2257.1 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET Features - 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate - rDS(ON) = 0.600Ω (BUZ45) power field effect transistor designed for applications such - SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers, - Nanosecond Switching Speeds (9.6A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 500V, - Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.600 - High Input Impedance Ohm, N- Formerly...