GD8NC60KD
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Key Features
- Lower on voltage drop (VCE(sat))
- Lower CRES / CIES ratio (no cross-conduction susceptibility)
- Very soft ultra fast recovery antiparallel diode
- Short circuit withstand time 10 µs
Applications
- SMPS and PFC in both hard switch and
