rf power transistors ldmos enhanced technology.
* IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 %
* EXCELLENT THERMAL STABILITY
* COMMON SOURCE CONFIGURAT.
The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband per.
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