Ldmos Datasheet | Specifications & PDF Download

DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extrem

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t

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Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness

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BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 150

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www.DataSheet4U.com LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIE

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www.DataSheet4U.com BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet 1. Product profile 1.1 Genera

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RF2L16180CB4 Datasheet 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connection 1 Drain A 2 Drain B

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BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W

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PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz Description The PXAC203302FV is a 330-watt LDMOS FET with an as

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BLM2425M7S60P LDMOS 2-stage power MMIC Rev. 4 — 29 June 2017 Product data sheet 1. Product profile 1.1 General description 60W dual path, 2-stage p

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BLF178XR; BLF178XRS Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 1400 W extrem

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polyfet rf devices L225 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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BLP9G0722-20; BLP9G0722-20G Power LDMOS transistor Rev. 3 — 26 February 2018 Product data sheet 1. Product profile 1.1 General description 20 W pla

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MU1503V LDMOS TRANSISTOR 30W, 50V High Power RF LDMOS FETs Description The MU1503V is a 30-watt, highly rugged, unmatched LDMOS FET, designed for wide

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www.DataSheet4U.com BLF888 UHF power LDMOS transistor Rev. 01 — 16 December 2008 Objective data sheet 1. Product profile 1.1 General description A 50

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