Ldmos Datasheet | Specifications & PDF Download

Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-b

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MX0525 LDMOS TRANSISTOR 250W, 28V High Power RF LDMOS FETs Description The MX0525 is a 250-watt, highly rugged, unmatched LDMOS FET, designed for wide

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers

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MK1160VP LDMOS TRANSISTOR Document Number: MK1160VP Preliminary Datasheet V1.0 1000-1100MHz, 50V, 600W, RF Power LDMOS Transistor Description The MK

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MK1040VP LDMOS TRANSISTOR 400W, 50V High Power RF LDMOS FETs Description The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET,

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MXR9745T1/D Advance Information The RF Small Signal Line Silicon Lateral FET MXR9745T

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DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE55

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers

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MX0514 LDMOS TRANSISTOR Document Number: MX0514 Product Datasheet V1.0 140W, 28V High Power RF LDMOS FETs Description The MX0514 is a 140-watt capab

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PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt

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DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Prelimin

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. www.DataSheet4U.com Order this document by MW5IC2030M/D The Wideband IC Line

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BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General desc

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BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMO

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