Description
www.DataSheet4U.com BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev.01 * 20 November 2008 Product data sheet 1.Product profile 1..
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Features
* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efficiency = 25 % N IMD3 =
* 38 dBc N ACPR =
* 42 dBc I Easy power control I Integrated ESD protection I
Applications
* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 2110 to 2170
VDS (V) 30
PL(AV) (W) 40
Gp (dB) 16.0
ηD (%) 25
IMD3 (dBc)
* 38[1]
ACPR (dBc