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BLF6G22LS-180RN, BLF6G22-180RN Power LDMOS Transistor

BLF6G22LS-180RN Description

www.DataSheet4U.com BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev.01 * 20 November 2008 Product data sheet 1.Product profile 1..
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

BLF6G22LS-180RN Features

* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efficiency = 25 % N IMD3 =
* 38 dBc N ACPR =
* 42 dBc I Easy power control I Integrated ESD protection I

BLF6G22LS-180RN Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 16.0 ηD (%) 25 IMD3 (dBc)
* 38[1] ACPR (dBc

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This datasheet PDF includes multiple part numbers: BLF6G22LS-180RN, BLF6G22-180RN. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLF6G22LS-180RN, BLF6G22-180RN
Manufacturer
NXP ↗
File Size
135.96 KB
Datasheet
BLF6G22-180RN_PhilipsSemiconductors.pdf
Description
Power LDMOS Transistor
Note
This datasheet PDF includes multiple part numbers: BLF6G22LS-180RN, BLF6G22-180RN.
Please refer to the document for exact specifications by model.

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