Description
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
38[1]
ACPR (dBc)
42[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.CA
Features
- I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efficiency = 25 % N IMD3 =.
- 38 dBc N ACPR =.
- 42 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use
NXP Semiconductors
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BLF6G22LS-180RN Datasheet
