BLF6G22LS-180RN Datasheet, Transistor, NXP

BLF6G22LS-180RN Features

• Transistor I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Ef

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BLF6G22LS-180RN

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📄 Datasheet

Description:

Power ldmos transistor. 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typ

BLF6G22LS-180RN Application

• Applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production

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BLF6G22LS-180RN

NXP

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