BLF6G22-180RN Datasheet - NXP

BLF6G22-180RN - Power LDMOS Transistor

180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp

BLF6G22-180RN Features

* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efﬁciency = 25 % N IMD3 =

* 38 dBc N ACPR =

* 42 dBc I Easy power control I Integrated ESD protection I

BLF6G22-180RN_PhilipsSemiconductors.pdf

BLF6G22-180RN Datasheet Preview — Preview of BLF6G22-180RN PDF

Datasheet Details

Part number:

BLF6G22-180RN

Manufacturer:

NXP ↗

File Size:

135.96 KB

Description:

Power ldmos transistor.

📁 Related Datasheet

BLF6G22-45 BLF6G22L-40BN BLF6G22L-40P BLF6G22LS-100 BLF6G22LS-130 BLF6G22LS-180RN

📌 All Tags

BLF6G22-180RN Power LDMOS Transistor NXP