Part number:
BLF6G22-180RN
Manufacturer:
File Size:
135.96 KB
Description:
Power ldmos transistor.
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp
BLF6G22-180RN Features
* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efficiency = 25 % N IMD3 =
* 38 dBc N ACPR =
* 42 dBc I Easy power control I Integrated ESD protection I
BLF6G22-180RN_PhilipsSemiconductors.pdf
Datasheet Details
BLF6G22-180RN
135.96 KB
Power ldmos transistor.
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