BLF6G22-180RN Datasheet - NXP

BLF6G22-180RN, Power LDMOS Transistor

www.DataSheet4U.com BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev.01 * 20 November 2008 Product data sheet 1.Product proﬁle 1..
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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Datasheet Details

Part number:

BLF6G22-180RN

Manufacturer:

NXP ↗

File Size:

135.96 KB

Description:

Power LDMOS Transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efﬁciency = 25 % N IMD3 =
* 38 dBc N ACPR =
* 42 dBc I Easy power control I Integrated ESD protection I

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 16.0 ηD (%) 25 IMD3 (dBc)
* 38[1] ACPR (dBc

BLF6G22-180RN Distributors

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BLF6G22-180RN Power LDMOS Transistor NXP

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