BLF6G22LS-40BN Datasheet - Ampleon

BLF6G22LS-40BN, Power LDMOS transistor

BLF6G22LS-40BN Power LDMOS transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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Datasheet Details

Part number:

BLF6G22LS-40BN

Manufacturer:

Ampleon

File Size:

1.06 MB

Description:

Power LDMOS transistor

Features

* Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:
* Average output power = 2.5 W
* Power gain = 18.5 dB (typ)
* Efficiency = 16 %
* ACPR = 50 dBc
* Easy power control
* Integrated ESD protection

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 2.5 18.5 16 ACPR (dBc) 50[1] [1] Tes

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BLF6G22LS-40BN Power LDMOS transistor Ampleon

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