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BLF6G20-180RN - Power LDMOS transistor

Product Overview

Ampleon

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BLF6G20-180RN Power LDMOS transistor by Ampleon - Datasheet Preview — Datasheet preview – BLF6G20-180RN

Datasheet Details

Part number	BLF6G20-180RN
Manufacturer	Ampleon
File Size	1.09 MB
Description	Power LDMOS transistor
Datasheet	BLF6G20-180RN Datasheet
Additional preview pages of the BLF6G20-180RN datasheet.

Product details

Description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:.
Average output power = 40 W.
Power gain = 17.2 dB.
Efficiency = 27 %.
IMD3 = 41 dBc.
ACPR = 38 dBc.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1800 MHz to 2000 MHz).
Internally matched for ease of use.

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Published: Jan 28, 2020 |