BLF6G20-230PRN Datasheet - NXP Semiconductors

BLF6G20-230PRN Power LDMOS transistor

230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 28 PL(AV) (W) .

BLF6G20-230PRN Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 mA: N Average output power = 50 W N Power gain = 16.5 dB (typ) N Efﬁciency = 29.5 % N ACPR =

* 35 dBc I Easy power control I Integrated ESD protection I Excellent rugged

BLF6G20-230PRN_NXPSemiconductors.pdf