Datasheet4U Logo Datasheet4U.com

BLF6G20-230PRN

Power LDMOS transistor

BLF6G20-230PRN Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 mA: N Average output power = 50 W N Power gain = 16.5 dB (typ) N Efficiency = 29.5 % N ACPR =

* 35 dBc I Easy power control I Integrated ESD protection I Excellent rugged

BLF6G20-230PRN General Description

230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 28 PL(AV) (W) .

BLF6G20-230PRN Datasheet (84.44 KB)

Preview of BLF6G20-230PRN PDF

Datasheet Details

Part number:

BLF6G20-230PRN

Manufacturer:

NXP ↗ Semiconductors

File Size:

84.44 KB

Description:

Power ldmos transistor.
www.DataSheet4U.com BLF6G20-230PRN Power LDMOS transistor Rev. 01

* 2 December 2008 Objective data sheet 1. Product profile 1.1 General descr.

📁 Related Datasheet

BLF6G20-110 Power LDMOS transistor (NXP Semiconductors)

BLF6G20-180P UHF power LDMOS transistor (NXP)

BLF6G20-180PN Power LDMOS transistor (NXP Semiconductors)

BLF6G20-180RN Power LDMOS Transistor (NXP)

BLF6G20-180RN Power LDMOS transistor (Ampleon)

BLF6G20-45 Power LDMOS transistor (Ampleon)

BLF6G20-45 UHF power LDMOS transistor (NXP)

BLF6G20LS-110 Power LDMOS transistor (NXP Semiconductors)

BLF6G20LS-140 Power LDMOS transistor (NXP Semiconductors)

BLF6G20LS-180RN Power LDMOS Transistor (NXP)

TAGS

BLF6G20-230PRN Power LDMOS transistor NXP Semiconductors

Image Gallery

BLF6G20-230PRN Datasheet Preview Page 2 BLF6G20-230PRN Datasheet Preview Page 3

BLF6G20-230PRN Distributor