BLF6G20LS-110 Datasheet, transistor, NXP Semiconductors

BLF6G20LS-110 Features

• Transistor I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Effici

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BLF6G20LS-110

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NXP ↗ Semiconductors

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📄 Datasheet

Description:

Power ldmos transistor. 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF

BLF6G20LS-110 Application

• Applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB prod

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BLF6G20LS-110

NXP Semiconductors

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