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BLF6G20LS-110 - Power LDMOS transistor

This page provides the datasheet information for the BLF6G20LS-110, a member of the BLF6G20-110 Power LDMOS transistor family.

Datasheet Summary

Description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Features

  • I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efficiency = 31 % N IMD3 =.
  • 37 dBc N ACPR =.
  • 40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, re.

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Datasheet Details

Part number BLF6G20LS-110
Manufacturer NXP Semiconductors
File Size 110.85 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G20LS-110 Datasheet
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www.DataSheet4U.com BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 01 — 28 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 19 ηD (%) 31 IMD3 (dBc) −37[1] ACPR (dBc) −40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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