BLF6G20LS-110, BLF6G20-110 Datasheet - NXP Semiconductors

Datasheet Details

Part number:

BLF6G20LS-110, BLF6G20-110

Manufacturer:

NXP ↗ Semiconductors

File Size:

110.85 KB

Description:

Power LDMOS transistor

Note:

This datasheet PDF includes multiple part numbers: BLF6G20LS-110, BLF6G20-110.
Please refer to the document for exact specifications by model.

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efﬁciency = 31 % N IMD3 =

* 37 dBc N ACPR =

* 40 dBc I Easy power control I Integrated ESD protection I Ex

BLF6G20-110_NXPSemiconductors.pdf

BLF6G20LS-110 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF6G20LS-110, BLF6G20-110. Please refer to the document for exact specifications by model.

BLF6G20LS-110, BLF6G20-110, Power LDMOS transistor

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W)

BLF6G20LS-110 Distributor

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BLF6G20-110 Power LDMOS transistor NXP Semiconductors

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