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BLF6G20LS-110, BLF6G20-110 - Power LDMOS transistor

BLF6G20LS-110 Description

www.DataSheet4U.com BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev.01 * 28 January 2008 Preliminary data sheet 1.Product profile 1.1.
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

BLF6G20LS-110 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efficiency = 31 % N IMD3 =
* 37 dBc N ACPR =
* 40 dBc I Easy power control I Integrated ESD protection I Ex

BLF6G20LS-110 Applications

* at freque. cies from 1800 MHz to 2000 MHz. Table 1. Typical performa. ce RF performa. ce at Tcase = 25 °C i. a commo. source class-AB productio. test circuit. Mode of operatio. 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 19 ηD (%) 31 IMD3 (dBc)
* 37[1] ACPR

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BLF6G20LS-110, BLF6G20-110. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLF6G20LS-110, BLF6G20-110
Manufacturer
NXP ↗ Semiconductors
File Size
110.85 KB
Datasheet
BLF6G20-110_NXPSemiconductors.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF6G20LS-110, BLF6G20-110.
Please refer to the document for exact specifications by model.

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