BLF6G20LS-140 Power LDMOS transistor

NXP Semiconductors

Description

BLF6G20LS-140 Power LDMOS transistor Rev.01 * 27 February 2009 www.DataSheet4U.com Product data sheet 1.Product proﬁle 1.1 General descri.
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

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Datasheet Specifications

Part number: BLF6G20LS-140
Manufacturer: NXP ↗ Semiconductors
File Size: 92.62 KB
Datasheet: BLF6G20LS-140_NXPSemiconductors.pdf
Description: Power LDMOS transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: N Average output power = 35.5 W N Power gain = 16.5 dB (typ) N Efﬁciency = 30 % N IMD3 =
* 37 dBc N ACPR =
* 40 dBc I Easy power control I Integrated ESD prot

Applications

* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 35.5 Gp (dB) 16.5 ηD (%) 30 IMD3 (dBc)
* 37[1] A

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BLF6G20LS-140 Power LDMOS transistor NXP Semiconductors

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