BLF6G20LS-140 Datasheet (NXP Semiconductors)

BLF6G20LS-140, Power LDMOS transistor

140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W)

BLF6G20LS-140 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: N Average output power = 35.5 W N Power gain = 16.5 dB (typ) N Efﬁciency = 30 % N IMD3 =

* 37 dBc N ACPR =

* 40 dBc I Easy power control I Integrated ESD prot