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BLF6G20LS-140 Datasheet - NXP Semiconductors

Power LDMOS transistor

BLF6G20LS-140 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: N Average output power = 35.5 W N Power gain = 16.5 dB (typ) N Efficiency = 30 % N IMD3 =

* 37 dBc N ACPR =

* 40 dBc I Easy power control I Integrated ESD prot

BLF6G20LS-140 General Description

140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) .

BLF6G20LS-140 Datasheet (92.62 KB)

Preview of BLF6G20LS-140 PDF

Datasheet Details

Part number:

BLF6G20LS-140

Manufacturer:

NXP ↗ Semiconductors

File Size:

92.62 KB

Description:

Power ldmos transistor.
BLF6G20LS-140 Power LDMOS transistor Rev. 01 27 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General descri.

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TAGS

BLF6G20LS-140 Power LDMOS transistor NXP Semiconductors

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