BLF6G22LS-100 Datasheet - NXP Semiconductors

BLF6G22LS-100 Power LDMOS transistor

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) .

BLF6G22LS-100 Features

* Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 25 W Gain = 18.2 dB Efficiency = 29 % IMD3 =

* 37 dBc ACPR =

* 41 dBc

* Easy power control

* Integrate

BLF6G22LS-100 Datasheet (160.20 KB)