BLF6G22LS-100 Datasheet - NXP Semiconductors

BLF6G22LS-100, Power LDMOS transistor

BLF6G22LS-100 Power LDMOS transistor Rev.02 * 31 March 2010 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 General descript.
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

BLF6G22LS-100_NXPSemiconductors.pdf

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Datasheet Details

Part number:

BLF6G22LS-100

Manufacturer:

NXP ↗ Semiconductors

File Size:

160.20 KB

Description:

Power LDMOS transistor

Features

* Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 25 W Gain = 18.2 dB Efficiency = 29 % IMD3 =
* 37 dBc ACPR =
* 41 dBc
* Easy power control
* Integrate

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 18.2 ηD (%) 29 IMD3 (dBc)
* 37[1] ACP

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