BLF6G22S-45 Datasheet - NXP Semiconductors

BLF6G22S-45, Power LDMOS transistor

BLF6G22S-45 Power LDMOS transistor Rev.02 * 17 April 2008 www.DataSheet4U.com Product data sheet 1.Product proﬁle 1.1 General .
45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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Datasheet Details

Part number:

BLF6G22S-45

Manufacturer:

NXP ↗ Semiconductors

File Size:

95.73 KB

Description:

Power LDMOS transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA: N Average output power = 2.5 W N Power gain = 18.5 dB (typ) N Efﬁciency = 13 % N ACPR =
* 48 dBc I Easy power control I Integrated ESD protection I Excellent ruggedne

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 18.5 ηD (%) 13 ACPR (dBc)
* 48[1] Te

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BLF6G22S-45 Power LDMOS transistor NXP Semiconductors

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