BLF6G22LS-130 Datasheet - NXP Semiconductors

BLF6G22LS-130, Power LDMOS transistor

BLF6G22LS-130 Power LDMOS transistor Rev.01 * 23 May 2008 www.DataSheet4U.com Product data sheet 1.Product proﬁle 1.1 General .
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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Datasheet Details

Part number:

BLF6G22LS-130

Manufacturer:

NXP ↗ Semiconductors

File Size:

108.60 KB

Description:

Power LDMOS transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 1100 mA: N Average output power = 30 W N Power gain = 17 dB (typ) N Efﬁciency = 28.5 % N IMD3 =
* 37 dBc N ACPR =
* 40 dBc I Easy power control I Integrated ESD protec

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 30 Gp (dB) 17 ηD (%) 28.5 IMD3 (dBc)
* 37[1] ACP

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