BLF6G22LS-130 - Power LDMOS transistor

Product Overview

NXP Semiconductors

Datasheet Details

Part number	BLF6G22LS-130
Manufacturer	NXP Semiconductors
File Size	108.60 KB
Description	Power LDMOS transistor
Datasheet	BLF6G22LS-130 Datasheet
Additional preview pages of the BLF6G22LS-130 datasheet.

Product details

Description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. 37[1] ACPR (dBc) 40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MH

Features

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 1100 mA: N Average output power = 30 W N Power gain = 17 dB (typ) N Efﬁciency = 28.5 % N IMD3 =.
37 dBc N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/.

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Published: Jun 18, 2010 |