BLF6G22LS-130 Datasheet, transistor equivalent, NXP Semiconductors

BLF6G22LS-130 Features

• Transistor I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 1100 mA: N Average output power = 30 W N Power gain = 17 dB (typ)

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BLF6G22LS-130

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NXP (https://www.nxp.com/) Semiconductors

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📄 Datasheet

Description:

Power ldmos transistor. 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF

BLF6G22LS-130 Application

• Applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB prod

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BLF6G22LS-130

NXP Semiconductors

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