Part number:
BLF6G22LS-130
Manufacturer:
NXP ↗ Semiconductors
File Size:
108.60 KB
Description:
Power ldmos transistor.
BLF6G22LS-130_NXPSemiconductors.pdf
Datasheet Details
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W)
BLF6G22LS-130 Features
* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 1100 mA: N Average output power = 30 W N Power gain = 17 dB (typ) N Efficiency = 28.5 % N IMD3 =
* 37 dBc N ACPR =
* 40 dBc I Easy power control I Integrated ESD protec
BLF6G22LS-130_NXPSemiconductors.pdf
Datasheet Details
BLF6G22LS-130
NXP ↗ Semiconductors
108.60 KB
Power ldmos transistor.
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