BLF6G22-45 Datasheet - Ampleon

BLF6G22-45, Power LDMOS transistor

BLF6G22-45 Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

BLF6G22-45-Ampleon.pdf

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Datasheet Details

Part number:

BLF6G22-45

Manufacturer:

Ampleon

File Size:

307.36 KB

Description:

Power LDMOS transistor

Features

* Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA:
* Average output power = 2.5 W
* Power gain = 18.5 dB (typ)
* Efficiency = 13 %
* ACPR = 49 dBc
* Easy power control
* Integrated ESD protection

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 2.5 18.5 13 ACPR (dBc) 49[1] [1] Tes

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