BLF6G20-110 Power LDMOS transistor

NXP Semiconductors

Description

www.DataSheet4U.com BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev.01 * 28 January 2008 Preliminary data sheet 1.Product proﬁle 1.1.
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

📥 Download Datasheet

BLF6G20-110 Datasheet Preview — Preview of BLF6G20-110 PDF

Datasheet Specifications

Part number: BLF6G20-110
Manufacturer: NXP ↗ Semiconductors
File Size: 110.85 KB
Datasheet: BLF6G20-110_NXPSemiconductors.pdf
Description: Power LDMOS transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efﬁciency = 31 % N IMD3 =
* 37 dBc N ACPR =
* 40 dBc I Easy power control I Integrated ESD protection I Ex

Applications

* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 19 ηD (%) 31 IMD3 (dBc)
* 37[1] ACPR

BLF6G20-110 Distributors

📁 Related Datasheet

BLF6G20-180P BLF6G20-180RN BLF6G20-45 BLF6G20LS-180RN BLF6G20S-45 BLF6G21-10G

📌 All Tags

BLF6G20-110 Power LDMOS transistor NXP Semiconductors

NXP Semiconductors BLF6G20-110-like datasheet