Description
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
38[1]
ACPR (dBc)
41[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.CAU
Features
- I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efficiency = 27 % N IMD3 =.
- 41 dBc N ACPR =.
- 38 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use
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NXP Semiconducto.
BLF6G20-180RN_PhilipsSemiconductors.pdf