Description
www.DataSheet4U.com BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev.01 * 17 November 2008 Product data sheet 1.Product profile 1..
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Features
* I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efficiency = 27 % N IMD3 =
* 41 dBc N ACPR =
* 38 dBc I Easy power control I Integrated ESD protection I
Applications
* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier WCDMA
[1]
f (MHz) 1930 to 1990
VDS (V) 30
PL(AV) (W) 40
Gp (dB) 17.2
ηD (%) 27
IMD3 (dBc)
* 38[1]
ACPR (dBc)