BLF6G10S-45 Power LDMOS Transistor

NXP

Description

www.DataSheet4U.com BLF6G10S-45 Power LDMOS transistor Rev.02 * 10 February 2009 Product data sheet 1.Product proﬁle 1.1 General descripti.
45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

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Datasheet Specifications

Part number: BLF6G10S-45
Manufacturer: NXP ↗
File Size: 120.99 KB
Datasheet: BLF6G10S-45_PhilipsSemiconductors.pdf
Description: Power LDMOS Transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 23 dB N Efﬁciency = 8 % N ACPR =
* 48.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁci

Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.0 Gp (dB) 23 ηD (%) 8 ACPR (dBc)
* 48.5[1] Test s

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BLF6G10S-45 Power LDMOS Transistor NXP

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