BLF6G10S-45 Datasheet (NXP) - Power LDMOS Transistor

BLF6G10S-45, Power LDMOS Transistor

45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.0

BLF6G10S-45 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 23 dB N Efﬁciency = 8 % N ACPR =

* 48.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁci