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BLF6G10S-45

Power LDMOS Transistor

BLF6G10S-45 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 23 dB N Efficiency = 8 % N ACPR =

* 48.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High effici

BLF6G10S-45 General Description

45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.0 .

BLF6G10S-45 Datasheet (120.99 KB)

Preview of BLF6G10S-45 PDF

Datasheet Details

Part number:

BLF6G10S-45

Manufacturer:

NXP ↗

File Size:

120.99 KB

Description:

Power ldmos transistor.
www.DataSheet4U.com BLF6G10S-45 Power LDMOS transistor Rev. 02 10 February 2009 Product data sheet 1. Product profile 1.1 General descripti.

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TAGS

BLF6G10S-45 Power LDMOS Transistor NXP

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