BLF6G10LS-135R - Power LDMOS transistor

NXP Semiconductors

📥 Download Datasheet

BLF6G10LS-135R Datasheet Preview — Preview of BLF6G10LS-135R PDF

Datasheet Details

Part number: BLF6G10LS-135R
Manufacturer: NXP ↗ Semiconductors
File Size: 134.06 KB
Datasheet: BLF6G10LS-135R_NXPSemiconductors.pdf
Description: Power LDMOS transistor

BLF6G10LS-135R Product details

Description

135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. 39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CA

Features

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain = 21.0 dB N Efﬁciency = 28.0 % N ACPR =.
39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of.

📁 Related Datasheet

BLF6G10LS-200RN - Power LDMOS transistor (Ampleon)
BLF6G10-200RN - Power LDMOS transistor (Ampleon)
BLF6G10-45 - Power LDMOS Transistor (NXP)
BLF6G10S-45 - Power LDMOS Transistor (NXP)
BLF6G13L-250P - Power LDMOS transistor (Ampleon)
BLF6G13LS-250P - Power LDMOS transistor (Ampleon)
BLF6G13LS-250PG - Power LDMOS transistor (Ampleon)
BLF6G15L-500H - Power LDMOS transistor (Ampleon)

📌 All Tags

Power LDMOS transistor NXP Semiconductors

NXP Semiconductors BLF6G10LS-135R-like datasheet

BLF6G10LS-200 - Power LDMOS transistor
BLF6G10LS-200R - Power LDMOS transistor
BLF6G10L-40BRN - Power LDMOS transistor
BLF6G20-110 - Power LDMOS transistor
BLF6G20-180PN - Power LDMOS transistor
BLF6G20-230PRN - Power LDMOS transistor

BLF6G10LS-135R Stock/Price