BLF6G10LS-135R Power LDMOS transistor

NXP Semiconductors

Description

www.DataSheet4U.com BLF6G10LS-135R Power LDMOS transistor Rev.01 * 17 November 2008 Product data sheet 1.Product proﬁle 1.1 General descri.
135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

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Datasheet Specifications

Part number: BLF6G10LS-135R
Manufacturer: NXP ↗ Semiconductors
File Size: 134.06 KB
Datasheet: BLF6G10LS-135R_NXPSemiconductors.pdf
Description: Power LDMOS transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain = 21.0 dB N Efﬁciency = 28.0 % N ACPR =
* 39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I

Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 26.5 Gp (dB) 21.0 ηD (%) 28.0 ACPR (dBc)
* 39[1] Test sig

BLF6G10LS-135R Distributors

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BLF6G10LS-135R Power LDMOS transistor NXP Semiconductors

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