BLF6G10LS-135R Datasheet - NXP Semiconductors

BLF6G10LS-135R Power LDMOS transistor

135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 26.5 Gp .

BLF6G10LS-135R Features

* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain = 21.0 dB N Efﬁciency = 28.0 % N ACPR =

* 39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I

BLF6G10LS-135R_NXPSemiconductors.pdf