Datasheet Details
Part number:
BLF6G10LS-135R
Manufacturer:
NXP ↗ Semiconductors
File Size:
134.06 KB
Description:
Power LDMOS transistor
Features
* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain = 21.0 dB N Efficiency = 28.0 % N ACPR =
* 39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I
BLF6G10LS-135R_NXPSemiconductors.pdf
BLF6G10LS-135R, Power LDMOS transistor
135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 26.5 Gp
BLF6G10LS-135R Distributor
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