BLF6G10LS-200RN, BLF6G10-200RN Datasheet - Ampleon

BLF6G10LS-200RN Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 86.

BLF6G10LS-200RN Features

* Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:

* Average output power = 40 W

* Power gain = 20 dB

* Efficiency = 28.5 %

* ACPR = 39 dBc

BLF6G10-200RN-Ampleon.pdf

BLF6G10LS-200RN Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF6G10LS-200RN, BLF6G10-200RN. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number:

BLF6G10LS-200RN, BLF6G10-200RN

Manufacturer:

Ampleon

File Size:

363.92 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF6G10LS-200RN, BLF6G10-200RN.
Please refer to the document for exact specifications by model.

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BLF6G10LS-200RN BLF6G10-200RN Power LDMOS transistor Ampleon

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