BLF6G10LS-200RN, BLF6G10-200RN - Power LDMOS transistor

Ampleon

Datasheet Details

Part number: BLF6G10LS-200RN, BLF6G10-200RN
Manufacturer: Ampleon
File Size: 363.92 KB
Datasheet: BLF6G10-200RN-Ampleon.pdf
Description: Power LDMOS transistor
Note: This datasheet PDF includes multiple part numbers: BLF6G10LS-200RN, BLF6G10-200RN.
Please refer to the document for exact specifications by model.

200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:.
Average output power = 40 W.
Power gain = 20 dB.
Efficiency = 28.5 %.
ACPR = 39 dBc.

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Published: Apr 26, 2018 |