BLF6G10LS-200RN, BLF6G10-200RN Power LDMOS transistor

Ampleon

Description

BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descripti.
200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

📥 Download Datasheet

BLF6G10LS-200RN Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF6G10LS-200RN, BLF6G10-200RN. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BLF6G10LS-200RN, BLF6G10-200RN
Manufacturer: Ampleon
File Size: 363.92 KB
Datasheet: BLF6G10-200RN-Ampleon.pdf
Description: Power LDMOS transistor
Note: This datasheet PDF includes multiple part numbers: BLF6G10LS-200RN, BLF6G10-200RN.
Please refer to the document for exact specifications by model.

Features

* Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:
* Average output power = 40 W
* Power gain = 20 dB
* Efficiency = 28.5 %
* ACPR = 39 dBc

Applications

* at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 ACPR (dBc) 39[1] [1] Test signa

BLF6G10LS-200RN Distributors

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BLF6G10-200RN Power LDMOS transistor Ampleon

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