BLF6G10LS-200RN Datasheet - Ampleon

BLF6G10LS-200RN Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 86.

BLF6G10LS-200RN Features

* Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:

* Average output power = 40 W

* Power gain = 20 dB

* Efficiency = 28.5 %

* ACPR = 39 dBc

BLF6G10LS-200RN Datasheet (363.92 KB)