BLF6G15LS-250PBRN Power LDMOS transistor

Ampleon

Description

BLF6G15LS-250PBRN Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.

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Datasheet Specifications

Part number: BLF6G15LS-250PBRN
Manufacturer: Ampleon
File Size: 360.26 KB
Datasheet: BLF6G15LS-250PBRN-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz, a supply voltage of 28 V and an IDq of 1410 mA:
* Average output power = 60 W
* Power gain = 18.5 dB
* Efficiency = 34.0 %
* ACPR = 30 dBc
* Easy power control
* Integrated ESD protection

Applications

* at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 1476 to 1511 28 60 18.5 34.0 ACPR (dBc) 30 [1] [1] Test

BLF6G15LS-250PBRN Distributors

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BLF6G15LS-250PBRN Power LDMOS transistor Ampleon

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