BLF6G13LS-250P Datasheet - Ampleon

BLF6G13LS-250P Power LDMOS transistor

250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) CW 1.3 50 250 17 56 1..

BLF6G13LS-250P Features

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications

* I

BLF6G13LS-250P Datasheet (394.98 KB)

BLF6G13LS-250P Datasheet Preview — Preview of BLF6G13LS-250P PDF

Datasheet Details

Part number:

BLF6G13LS-250P

Manufacturer:

Ampleon

File Size:

394.98 KB

Description:

Power ldmos transistor.

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BLF6G13LS-250P Power LDMOS transistor Ampleon

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