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BLF6G10L-40BRN Datasheet - NXP Semiconductors

Power LDMOS transistor

BLF6G10L-40BRN Features

* Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: ‹ Average output power (PL(AV)) = 2.5 W ‹ Power gain (Gp) = 23.0 dB ‹ Drain efficiency (ηD) = 15.0 % ‹ ACPR =

* 42.5 dBc

* Easy power control

BLF6G10L-40BRN General Description

40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA[1] [1] f (MHz) 791 to 821 VDS (V) 28 PL(AV) (W) 2.5 Gp (d.

BLF6G10L-40BRN Datasheet (327.49 KB)

Preview of BLF6G10L-40BRN PDF

Datasheet Details

Part number:

BLF6G10L-40BRN

Manufacturer:

NXP ↗ Semiconductors

File Size:

327.49 KB

Description:

Power ldmos transistor.

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TAGS

BLF6G10L-40BRN Power LDMOS transistor NXP Semiconductors

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