BLF6G10L-40BRN Datasheet - NXP Semiconductors

BLF6G10L-40BRN Power LDMOS transistor

40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA[1] [1] f (MHz) 791 to 821 VDS (V) 28 PL(AV) (W) 2.5 Gp (d.

BLF6G10L-40BRN Features

* Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: Average output power (PL(AV)) = 2.5 W Power gain (Gp) = 23.0 dB Drain efficiency (ηD) = 15.0 % ACPR =

* 42.5 dBc

* Easy power control

BLF6G10L-40BRN_NXPSemiconductors.pdf