Datasheet Details
Part number:
BLF6G10L-40BRN
Manufacturer:
NXP ↗ Semiconductors
File Size:
327.49 KB
Description:
Power LDMOS transistor
Features
* Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: Average output power (PL(AV)) = 2.5 W Power gain (Gp) = 23.0 dB Drain efficiency (ηD) = 15.0 % ACPR =
* 42.5 dBc
* Easy power control
BLF6G10L-40BRN_NXPSemiconductors.pdf
BLF6G10L-40BRN, Power LDMOS transistor
40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA[1] [1] f (MHz) 791 to 821 VDS (V) 28 PL(AV) (W) 2.5 Gp (d
BLF6G10L-40BRN Distributor
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