BLF6G10L-40BRN - Power LDMOS transistor

NXP Semiconductors

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Datasheet Details

Part number: BLF6G10L-40BRN
Manufacturer: NXP ↗ Semiconductors
File Size: 327.49 KB
Datasheet: BLF6G10L-40BRN_NXPSemiconductors.pdf
Description: Power LDMOS transistor

BLF6G10L-40BRN Product details

Description

40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. 42.5 Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CA

Features

Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: Average output power (PL(AV)) = 2.5 W Power gain (Gp) = 23.0 dB Drain efficiency (ηD) = 15.0 % ACPR =.
42.5 dBc.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (728 MHz to 960 MHz).
Intern.

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