Datasheet Specifications
- Part number
- BLF6G10L-40BRN
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 327.49 KB
- Datasheet
- BLF6G10L-40BRN_NXPSemiconductors.pdf
- Description
- Power LDMOS transistor
Description
DataSheet.in BLF6G10L-40BRN Power LDMOS transistor Rev.01 * 9 August 2010 Preliminary data sheet 1.Product profile 1.1 General .
Features
* Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: Average output power (PL(AV)) = 2.5 W Power gain (Gp) = 23.0 dB Drain efficiency (ηD) = 15.0 % ACPR =Applications
* at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA[1] [1] f (MHz) 791 to 821 VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 23.0 ηD (%) 15.0 ACPR (dBc)BLF6G10L-40BRN Distributors
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