Datasheet Details
Part number:
BLF6G20-180PN
Manufacturer:
NXP ↗ Semiconductors
File Size:
122.03 KB
Description:
Power LDMOS transistor
Features
* I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 32 V and an IDq of 1600 mA: N Average output power = 50 W N Power gain = 18 dB (typ) N Efficiency = 29.5 % N ACPR =
* 35 dBc I Easy power control I Integrated ESD protection I Excellent ruggedne
BLF6G20-180PN_NXPSemiconductors.pdf
BLF6G20-180PN, Power LDMOS transistor
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 32 PL(AV) (W)
BLF6G20-180PN Distributor
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