Datasheet Details
Part number:
BLF6G20-180RN
Manufacturer:
File Size:
141.98 KB
Description:
Power LDMOS Transistor
Features
* I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efficiency = 27 % N IMD3 =
* 41 dBc N ACPR =
* 38 dBc I Easy power control I Integrated ESD protection I
BLF6G20-180RN_PhilipsSemiconductors.pdf
BLF6G20-180RN, Power LDMOS Transistor
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp
BLF6G20-180RN Distributor
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