BLF6G20-180RN Datasheet - NXP

BLF6G20-180RN Power LDMOS Transistor

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp .

BLF6G20-180RN Features

* I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efﬁciency = 27 % N IMD3 =

* 41 dBc N ACPR =

* 38 dBc I Easy power control I Integrated ESD protection I

BLF6G20-180RN_PhilipsSemiconductors.pdf