BLF6G20-180RN Power LDMOS Transistor

NXP

Description

www.DataSheet4U.com BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev.01 * 17 November 2008 Product data sheet 1.Product proﬁle 1..
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

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Datasheet Specifications

Part number: BLF6G20-180RN
Manufacturer: NXP ↗
File Size: 141.98 KB
Datasheet: BLF6G20-180RN_PhilipsSemiconductors.pdf
Description: Power LDMOS Transistor

Features

* I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efﬁciency = 27 % N IMD3 =
* 41 dBc N ACPR =
* 38 dBc I Easy power control I Integrated ESD protection I

Applications

* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 17.2 ηD (%) 27 IMD3 (dBc)
* 38[1] ACPR (dBc)

BLF6G20-180RN Distributors

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BLF6G20-180RN Power LDMOS Transistor NXP

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