BLF6G13L-250P Datasheet (Ampleon) - Power LDMOS transistor

BLF6G13L-250P, Power LDMOS transistor

250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.

Table 1.

Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) CW 1.3 50 250 17 56 1.

BLF6G13L-250P Features

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications

* I