BLF6G10LS-200 Datasheet - NXP Semiconductors

BLF6G10LS-200 Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (d.

BLF6G10LS-200 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efﬁciency = 27 % N ACPR =

* 41 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High

BLF6G10LS-200_NXPSemiconductors.pdf