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BLF6G10LS-200 Datasheet - NXP Semiconductors

Power LDMOS transistor

BLF6G10LS-200 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR =

* 41 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High

BLF6G10LS-200 General Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (d.

BLF6G10LS-200 Datasheet (137.34 KB)

Preview of BLF6G10LS-200 PDF

Datasheet Details

Part number:

BLF6G10LS-200

Manufacturer:

NXP ↗ Semiconductors

File Size:

137.34 KB

Description:

Power ldmos transistor.
www.DataSheet4U.com BLF6G10LS-200 Power LDMOS transistor Rev. 01 18 January 2008 Preliminary data sheet 1. Product profile 1.1 General desc.

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TAGS

BLF6G10LS-200 Power LDMOS transistor NXP Semiconductors

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