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BLF6G10LS-200 Power LDMOS transistor

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Description

www.DataSheet4U.com BLF6G10LS-200 Power LDMOS transistor Rev.01 * 18 January 2008 Preliminary data sheet 1.Product profile 1.1 General desc.
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

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Features

* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR =
* 41 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High

Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc)
* 41[1] Test signal: 3

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