BLF6G10LS-200R Datasheet - NXP Semiconductors

Power LDMOS transistor

BLF6G10LS-200R Features

* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efﬁciency = 27.5 % N ACPR =

* 40 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High

BLF6G10LS-200R General Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (d.

BLF6G10LS-200R Datasheet (135.33 KB)

BLF6G10LS-200R Datasheet Preview — Preview of BLF6G10LS-200R PDF

Datasheet Details

Part number:

BLF6G10LS-200R

Manufacturer:

NXP ↗ Semiconductors

File Size:

135.33 KB

Description:

Power ldmos transistor.
www.DataSheet4U.com BLF6G10LS-200R Power LDMOS transistor Rev. 01 21 January 2008 Preliminary data sheet 1. Product proﬁle 1.1 General des.

📁 Related Datasheet

BLF6G10LS-200 Power LDMOS transistor (NXP Semiconductors)

BLF6G10LS-200RN Power LDMOS transistor (Ampleon)

BLF6G10LS-135R Power LDMOS transistor (NXP Semiconductors)

BLF6G10L-40BRN Power LDMOS transistor (NXP Semiconductors)

BLF6G10-200RN Power LDMOS transistor (Ampleon)

BLF6G10-45 Power LDMOS Transistor (NXP)

BLF6G10S-45 Power LDMOS Transistor (NXP)

BLF6G13L-250P Power LDMOS transistor (Ampleon)

BLF6G13LS-250P Power LDMOS transistor (Ampleon)

BLF6G13LS-250PG Power LDMOS transistor (Ampleon)

TAGS

BLF6G10LS-200R Power LDMOS transistor NXP Semiconductors

Image Gallery

BLF6G10LS-200R Features

BLF6G10LS-200R General Description

Datasheet Details

File Size:

Description:

BLF6G10LS-200R Distributor