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BLF6G10LS-200R - Power LDMOS transistor

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BLF6G10LS-200R Product details

Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. 40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CA

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