BLF6G10LS-200R Datasheet - NXP Semiconductors

datasheet Preview Page 1 from Datasheet4u.com

BLF6G10LS-200R Power LDMOS transistor

www.DataSheet4U.com BLF6G10LS-200R Power LDMOS transistor Rev.01 * 21 January 2008 Preliminary data sheet 1.Product proﬁle 1.1 General des.
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

BLF6G10LS-200R_NXPSemiconductors.pdf

BLF6G10LS-200R Datasheet Preview — Preview of BLF6G10LS-200R PDF

Datasheet Details

Part number:

BLF6G10LS-200R

Manufacturer:

NXP ↗ Semiconductors

File Size:

135.33 KB

Description:

Power LDMOS transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efﬁciency = 27.5 % N ACPR =
* 40 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High

Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27.5 ACPR (dBc)
* 40[1] Test signal:

BLF6G10LS-200R Distributors

📁 Related Datasheet

BLF6G10LS-200RN BLF6G10-200RN BLF6G10-45 BLF6G10S-45 BLF6G13L-250P BLF6G13LS-250P

📌 All Tags

BLF6G10LS-200R Power LDMOS transistor NXP Semiconductors

NXP Semiconductors BLF6G10LS-200R-like datasheet