BLF6G13LS-250PG, BLF6G13L-250P Datasheet - Ampleon

BLF6G13LS-250PG Power LDMOS transistor

250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) CW 1.3 50 250 17 56 1..

BLF6G13LS-250PG Features

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications

* I

BLF6G13L-250P-Ampleon.pdf

BLF6G13LS-250PG Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF6G13LS-250PG, BLF6G13L-250P. Please refer to the document for exact specifications by model.

BLF6G13LS-250PG Datasheet Preview Page 2

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Datasheet Details

Part number:

BLF6G13LS-250PG, BLF6G13L-250P

Manufacturer:

Ampleon

File Size:

394.98 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF6G13LS-250PG, BLF6G13L-250P.
Please refer to the document for exact specifications by model.

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BLF6G13LS-250PG BLF6G13L-250P Power LDMOS transistor Ampleon

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