BLF6G20-45 Datasheet (NXP) - UHF power LDMOS transistor

BLF6G20-45, UHF power LDMOS transistor

45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 28 PL(AV) (W) 2

BLF6G20-45 Features

* s Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 350 mA: x Average output power = 2.5 W x Power gain = 17 dB (typ) x Efﬁciency = 14 % x ACPR =

* 50 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness