BLF6G21-10G - Power LDMOS Transistor

NXP

BLF6G21-10G Datasheet Preview — Preview of BLF6G21-10G PDF

Datasheet Details

Part number	BLF6G21-10G
Manufacturer	NXP ↗
File Size	84.66 KB
Description	Power LDMOS Transistor
Datasheet	BLF6G21-10G_PhilipsSemiconductors.pdf

BLF6G21-10G Product details

Description

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] f (MHz) 2110 to 2170 2110 to 2170 VDS (V) 28 28 PL(AV) (W) 0.7 2 Gp (dB) 18.5 19.3 ηD (%) 15 31 ACPR (dBc) 50[1] 39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;

Features

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 0.7 W N Gain = 18.5 dB N Efﬁciency = 15 % N ACPR =.
50 dBc I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 2 W N Gain = 19.3 dB N Efﬁciency = 31 % N ACPR =.
39 dBc I Easy power control I Integrated ESD protection I Excellent rug.

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Published: Jul 1, 2009 |