BLF6G21-10G Datasheet (NXP) - Power LDMOS Transistor

BLF6G21-10G, Power LDMOS Transistor

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1.

Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] f (MHz) 2110 to 2170 2110 to 2170 VDS (

BLF6G21-10G Features

* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 0.7 W N Gain = 18.5 dB N Efﬁciency = 15 % N ACPR =

* 50 dBc I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a