BLF6G21-10G Power LDMOS Transistor

NXP

Description

www.DataSheet4U.com BLF6G21-10G Power LDMOS transistor Rev.01 * 11 May 2009 Objective data sheet 1.Product proﬁle 1.1 General .
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1.

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Datasheet Specifications

Part number: BLF6G21-10G
Manufacturer: NXP ↗
File Size: 84.66 KB
Datasheet: BLF6G21-10G_PhilipsSemiconductors.pdf
Description: Power LDMOS Transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 0.7 W N Gain = 18.5 dB N Efﬁciency = 15 % N ACPR =
* 50 dBc I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a

Applications

* at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] f (MHz) 2110 to 2170 2110 to 2170 VDS (V) 28 28 PL(AV) (W) 0.7 2 Gp (dB) 18.5 19.3 ηD (%) 15 3

BLF6G21-10G Distributors

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BLF6G21-10G Power LDMOS Transistor NXP

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