BLF6G22L-40BN Datasheet - Ampleon

BLF6G22L-40BN Power LDMOS transistor

40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA.

BLF6G22L-40BN Features

* Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:

* Average output power = 2.5 W

* Power gain = 19 dB (typ)

* Efficiency = 16 %

* ACPR = 50 dBc

* Easy power control

* Integrated ESD protection

BLF6G22L-40BN-Ampleon.pdf

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Datasheet Details

Part number:

BLF6G22L-40BN

Manufacturer:

Ampleon

File Size:

344.88 KB

Description:

Power ldmos transistor.

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