BLP9G0722-20G Datasheet, transistor equivalent, Ampleon

BLP9G0722-20G Features

  • Transistor
  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent therm

PDF File Details

Part number:

BLP9G0722-20G

Manufacturer:

Ampleon

File Size:

614.66kb

Download:

📄 Datasheet

Description:

Power ldmos transistor. 20 W plastic LDMOS power transistor for base station applications at frequencies from 100 MHz to 2700 MHz. Table 1. Application perf

Datasheet Preview: BLP9G0722-20G 📥 Download PDF (614.66kb)
Page 2 of BLP9G0722-20G Page 3 of BLP9G0722-20G

BLP9G0722-20G Application

  • Applications at frequencies from 100 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25

TAGS

BLP9G0722-20G
Power
LDMOS
transistor
Ampleon

📁 Related Datasheet

BLP9G0722-20 - Power LDMOS transistor (Ampleon)
BLP9G0722-20; BLP9G0722-20G Power LDMOS transistor Rev. 3 — 26 February 2018 Product data sheet 1. Product profile 1.1 General description 20 W pla.

BLP021N10 - MOSFET (BELLING)
BLP021N10 MOSFET 1.Description Step-Down Converter BLP021N10, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench tech.

BLP023N10 - MOSFET (BELLING)
BLP023N10 MOSFET 1.Description Step-Down Converter BLP023N10, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench tech.

BLP0240 - Si PIN junction photodiode (SHANGHAI BELLING)
.. BLP0240 PIN Si Si , 。 • • : PIN : AlSi Anode Cathode N P :1.0 mm × 1.0 mm :300±25µm N P N N : PIN :AlSi http.

BLP02N08 - MOSFET (BELLING)
BLP02N08 MOSFET 1.Description Step-Down Converter BLP02N08, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench techno.

BLP038N10GL - MOSFET (BELLING)
BLP038N10GL MOSFET Step-Down Converter 1.Description , BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te.

BLP038N15 - MOSFET (BELLING)
BLP038N15 MOSFET 1.Description Step-Down Converter BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolog.

BLP03N10 - MOSFET (BELLING)
BLP03N10 MOSFET Step-Down Converter 1.Description , BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolo.

BLP0427M9S20 - Power LDMOS transistor (Ampleon)
BLP0427M9S20; BLP0427M9S20G Power LDMOS transistor Rev. 1 — 16 January 2018 Product data sheet 1. Product profile 1.1 General description 20 W plas.

BLP0427M9S20G - Power LDMOS transistor (Ampleon)
BLP0427M9S20; BLP0427M9S20G Power LDMOS transistor Rev. 1 — 16 January 2018 Product data sheet 1. Product profile 1.1 General description 20 W plas.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts