BLP021N10 Datasheet - BELLING

BLP021N10 MOSFET

Step-Down Converter BLP021N10, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. .

BLP021N10 Features

* Fast Switching

* Low On-Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* High avalanche ruggedness

* RoHS product APPLICATIONS

* BMS

* High current switching applications TOLL8 ORDERING INFORMATION Ordering Codes Package BLP021N10-T TOLL8 Pr

BLP021N10-BELLING.pdf

BLP021N10 Datasheet Preview — Preview of BLP021N10 PDF

Datasheet Details

Part number:

BLP021N10

Manufacturer:

BELLING

File Size:

0.97 MB

Description:

Mosfet.

📁 Related Datasheet

BLP023N10 MOSFET (BELLING)

BLP0240 Si PIN junction photodiode (SHANGHAI BELLING)

BLP02N08 MOSFET (BELLING)

BLP038N10GL MOSFET (BELLING)

BLP038N15 MOSFET (BELLING)

BLP03N10 MOSFET (BELLING)

BLP0427M9S20 Power LDMOS transistor (Ampleon)

BLP0427M9S20G Power LDMOS transistor (Ampleon)

TAGS

BLP021N10 BLP021N10 MOSFET BELLING

BLP021N10 Distributor