BLP038N10GL
BELLING
938.80kb
Mosfet. , BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction l
TAGS
📁 Related Datasheet
BLP038N15 - MOSFET
(BELLING)
BLP038N15
MOSFET
1.Description
Step-Down Converter
BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolog.
BLP03N10 - MOSFET
(BELLING)
BLP03N10
MOSFET
Step-Down Converter
1.Description
,
BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolo.
BLP021N10 - MOSFET
(BELLING)
BLP021N10
MOSFET
1.Description
Step-Down Converter
BLP021N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech.
BLP023N10 - MOSFET
(BELLING)
BLP023N10
MOSFET
1.Description
Step-Down Converter
BLP023N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech.
BLP0240 - Si PIN junction photodiode
(SHANGHAI BELLING)
..
BLP0240
PIN Si
Si , 。
•
•
: PIN : AlSi
Anode Cathode
N
P
:1.0 mm × 1.0 mm :300±25µm
N P
N
N
: PIN :AlSi
http.
BLP02N08 - MOSFET
(BELLING)
BLP02N08
MOSFET
1.Description
Step-Down Converter
BLP02N08, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
techno.
BLP0427M9S20 - Power LDMOS transistor
(Ampleon)
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Rev. 1 — 16 January 2018
Product data sheet
1. Product profile
1.1 General description
20 W plas.
BLP0427M9S20G - Power LDMOS transistor
(Ampleon)
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Rev. 1 — 16 January 2018
Product data sheet
1. Product profile
1.1 General description
20 W plas.
BLP042N10G - MOSFET
(BELLING)
BLP042N10G
MOSFET
Step-Down Converter
1.Description
BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ
techn.
BLP04N11 - MOSFET
(BELLING)
BLP04N11
MOSFET
1.Description
BLP04N11, the N-channel EnhSatnecepd-DPoowwenr Converter
MOSFETs, is obtained by advanced double trench Ⅱ
,
technol.