BLP038N10GL - MOSFET

Description

BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This is suitable device for Synchronous rectification and high speed switching applications.

Features

Fast Switching.
Low On-Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
High avalanche ruggedness.
RoHS product.

BELLING

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Datasheet Details

Part number	BLP038N10GL
Manufacturer	BELLING
File Size	938.80 KB
Description	MOSFET
Datasheet	BLP038N10GL Datasheet
Additional preview pages of the BLP038N10GL datasheet.

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Full PDF Text Transcription

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BLP038N10GL MOSFET Step-Down Converter 1．Description , BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 100 V ID 120 A RDS(on)@10V.typ 3.3 mΩ RDS(on)@4.5V.typ 4.

Published: Nov 15, 2024 |