BLP0240
SHANGHAI BELLING
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Si pin junction photodiode.
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📁 Related Datasheet
BLP021N10 - MOSFET
(BELLING)
BLP021N10
MOSFET
1．Description
Step-Down Converter
BLP021N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech.
BLP023N10 - MOSFET
(BELLING)
BLP023N10
MOSFET
1．Description
Step-Down Converter
BLP023N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech.
BLP02N08 - MOSFET
(BELLING)
BLP02N08
MOSFET
1．Description
Step-Down Converter
BLP02N08, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
techno.
BLP038N10GL - MOSFET
(BELLING)
BLP038N10GL
MOSFET
Step-Down Converter
1．Description
,
BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te.
BLP038N15 - MOSFET
(BELLING)
BLP038N15
MOSFET
1．Description
Step-Down Converter
BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolog.
BLP03N10 - MOSFET
(BELLING)
BLP03N10
MOSFET
Step-Down Converter
1．Description
,
BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolo.
BLP0427M9S20 - Power LDMOS transistor
(Ampleon)
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Rev. 1 — 16 January 2018
Product data sheet
1. Product profile
1.1 General description
20 W plas.
BLP0427M9S20G - Power LDMOS transistor
(Ampleon)
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Rev. 1 — 16 January 2018
Product data sheet
1. Product profile
1.1 General description
20 W plas.
BLP042N10G - MOSFET
(BELLING)
BLP042N10G
MOSFET
Step-Down Converter
1．Description
BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ
techn.
BLP04N11 - MOSFET
(BELLING)
BLP04N11
MOSFET
1．Description
BLP04N11, the N-channel EnhSatnecepd-DPoowwenr Converter
MOSFETs, is obtained by advanced double trench Ⅱ
,
technol.
