Part number:
BLP0427M9S20G
Manufacturer:
Ampleon
File Size:
604.44 KB
Description:
Power ldmos transistor.
BLP0427M9S20G Datasheet (604.44 KB)
* High effici
BLP0427M9S20G Datasheet (604.44 KB)
BLP0427M9S20G
Ampleon
604.44 KB
Power ldmos transistor.
📁 Related Datasheet
BLP0427M9S20 - Power LDMOS transistor
(Ampleon)
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Rev. 1 — 16 January 2018
Product data sheet
1. Product profile
1.1 General description
20 W plas.
BLP042N10G - MOSFET
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BLP042N10G
MOSFET
Step-Down Converter
1．Description
BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ
techn.
BLP04N11 - MOSFET
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BLP04N11
MOSFET
1．Description
BLP04N11, the N-channel EnhSatnecepd-DPoowwenr Converter
MOSFETs, is obtained by advanced double trench Ⅱ
,
technol.
BLP021N10 - MOSFET
(BELLING)
BLP021N10
MOSFET
1．Description
Step-Down Converter
BLP021N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech.
BLP023N10 - MOSFET
(BELLING)
BLP023N10
MOSFET
1．Description
Step-Down Converter
BLP023N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech.
BLP0240 - Si PIN junction photodiode
(SHANGHAI BELLING)
..
BLP0240
PIN Si
Si ， 。
•
•
： PIN ： AlSi
Anode Cathode
N
P
：1.0 mm × 1.0 mm ：300±25µm
N P
N
N
： PIN ：AlSi
http.
BLP02N08 - MOSFET
(BELLING)
BLP02N08
MOSFET
1．Description
Step-Down Converter
BLP02N08, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
techno.
BLP038N10GL - MOSFET
(BELLING)
BLP038N10GL
MOSFET
Step-Down Converter
1．Description
,
BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te.
