BLP04N11 - MOSFET

Product Overview

BELLING

Datasheet Details

Part number	BLP04N11
Manufacturer	BELLING
File Size	954.23 KB
Description	MOSFET
Datasheet	BLP04N11 Datasheet
Additional preview pages of the BLP04N11 datasheet.

Product details

Description

BLP04N11, the N-channel EnhSatnecepd-DPoowwenr Converter MOSFETs, is obtained by advanced double trench Ⅱ , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.This is suitable device for motor drivers and high speed switching applications.KEY CHARACTERISTICS Parameter Value Unit VDSS 110 V ID 120 A RDS(on).typ 3.2 mΩ

Features

Fast Switching.
Low On-Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
High avalanche ruggedness.
RoHS product.

📁 Similar Datasheet

BLP0427M9S20 - Power LDMOS transistor (Ampleon)
BLP0427M9S20G - Power LDMOS transistor (Ampleon)
BLP0240 - Si PIN junction photodiode (SHANGHAI BELLING)
BLP05H6110XR - Power LDMOS transistor (Ampleon)
BLP05H6110XRG - Power LDMOS transistor (Ampleon)
BLP05H6150XR - Power LDMOS transistor (Ampleon)
BLP05H6150XRG - Power LDMOS transistor (Ampleon)
BLP05H6200XR - Power LDMOS transistor (Ampleon)

Other Datasheets by BELLING

BLP042N10G - MOSFET
BLP021N10 - MOSFET
BLP023N10 - MOSFET
BLP02N08 - MOSFET
BLP038N10GL - MOSFET
BLP038N15 - MOSFET

Published: Nov 15, 2024 |