Part number:
BLP02N08
Manufacturer:
BELLING
File Size:
745.28 KB
Description:
Mosfet.
BLP02N08 Datasheet (745.28 KB)
* Fast Switching
* Low On-Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* High avalanche ruggedness
* RoHS product APPLICATIONS
* BMS
* High current switching applications TOLL8 ORDERING INFORMATION Ordering Codes Package BLP02N08-T TOLL8 Prod
BLP02N08 Datasheet (745.28 KB)
BLP02N08
BELLING
745.28 KB
Mosfet.
📁 Related Datasheet
BLP021N10 - MOSFET
(BELLING)
BLP021N10
MOSFET
1．Description
Step-Down Converter
BLP021N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech.
BLP023N10 - MOSFET
(BELLING)
BLP023N10
MOSFET
1．Description
Step-Down Converter
BLP023N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech.
BLP0240 - Si PIN junction photodiode
(SHANGHAI BELLING)
..
BLP0240
PIN Si
Si ， 。
•
•
： PIN ： AlSi
Anode Cathode
N
P
：1.0 mm × 1.0 mm ：300±25µm
N P
N
N
： PIN ：AlSi
http.
BLP038N10GL - MOSFET
(BELLING)
BLP038N10GL
MOSFET
Step-Down Converter
1．Description
,
BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te.
BLP038N15 - MOSFET
(BELLING)
BLP038N15
MOSFET
1．Description
Step-Down Converter
BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolog.
BLP03N10 - MOSFET
(BELLING)
BLP03N10
MOSFET
Step-Down Converter
1．Description
,
BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolo.
BLP0427M9S20 - Power LDMOS transistor
(Ampleon)
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Rev. 1 — 16 January 2018
Product data sheet
1. Product profile
1.1 General description
20 W plas.
BLP0427M9S20G - Power LDMOS transistor
(Ampleon)
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Rev. 1 — 16 January 2018
Product data sheet
1. Product profile
1.1 General description
20 W plas.
