BLP042N10G Datasheet - BELLING

BLP042N10G - MOSFET

BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHA.

BLP042N10G Features

* Fast Switching

* Low On-Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* High avalanche ruggedness

* RoHS product APPLICATIONS

* Synchronous rectification

* High speed switching applications ORDERING INFORMATION Ordering Codes Product Code BLP042N

BLP042N10G-BELLING.pdf