Datasheet4U Logo Datasheet4U.com

BLP042N10G Datasheet - BELLING

BLP042N10G MOSFET

BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHA.

BLP042N10G Features

* Fast Switching

* Low On-Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* High avalanche ruggedness

* RoHS product APPLICATIONS

* Synchronous rectification

* High speed switching applications ORDERING INFORMATION Ordering Codes Product Code BLP042N

BLP042N10G Datasheet (0.98 MB)

Preview of BLP042N10G PDF

Datasheet Details

Part number:

BLP042N10G

Manufacturer:

BELLING

File Size:

0.98 MB

Description:

Mosfet.

📁 Related Datasheet

BLP0427M9S20 Power LDMOS transistor (Ampleon)

BLP0427M9S20G Power LDMOS transistor (Ampleon)

BLP04N11 MOSFET (BELLING)

BLP021N10 MOSFET (BELLING)

BLP023N10 MOSFET (BELLING)

BLP0240 Si PIN junction photodiode (SHANGHAI BELLING)

BLP02N08 MOSFET (BELLING)

BLP038N10GL MOSFET (BELLING)

BLP038N15 MOSFET (BELLING)

BLP03N10 MOSFET (BELLING)

TAGS

BLP042N10G MOSFET BELLING

Image Gallery

BLP042N10G Datasheet Preview Page 2 BLP042N10G Datasheet Preview Page 3

BLP042N10G Distributor