BLP03N10 - MOSFET

Description

BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This is suitable device for BMS and high current switching applications.

Features

Fast Switching.
Low On-Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
High avalanche ruggedness.
RoHS product.

BELLING

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Datasheet Details

Part number	BLP03N10
Manufacturer	BELLING
File Size	959.16 KB
Description	MOSFET
Datasheet	BLP03N10 Datasheet
Additional preview pages of the BLP03N10 datasheet.

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Full PDF Text Transcription

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BLP03N10 MOSFET Step-Down Converter 1．Description , BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 100 V ID 180 A RDS(on).typ 2.

Published: Nov 15, 2024 |