BLP03N10 Datasheet - BELLING

BLP03N10 - MOSFET

, BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Paramet.

BLP03N10 Features

* Fast Switching

* Low On-Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* High avalanche ruggedness

* RoHS product APPLICATIONS

* BMS

* High current switching applications TO-247 ORDERING INFORMATION Ordering Codes Package BLP03N10-F TO

BLP03N10-BELLING.pdf