Part number:
L225
Manufacturer:
Polyfet RF Devices
File Size:
38.33 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
Datasheet Details
L225 Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 6.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T =
Datasheet Details
L225
Polyfet RF Devices
38.33 KB
Silicon gate enhancement mode rf power ldmos transistor.
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L225 Distributor