RF2L16180CB4 - RF power LDMOS transistor
The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.
Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper exte
RF2L16180CB4 Features
* Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched for ease of use
* Optimized for Doherty applications
* Large positive
