RF2L16180CB4 Datasheet - STMicroelectronics

RF2L16180CB4 RF power LDMOS transistor

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper exte.

RF2L16180CB4 Features

* Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internally matched for ease of use

* Optimized for Doherty applications

* Large positive

RF2L16180CB4-STMicroelectronics.pdf