RF2L16180CB4 Datasheet, Transistor, STMicroelectronics

RF2L16180CB4 Features

• Transistor Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%
• High efficiency and linear gain operations
• Integrated ESD protection

PDF File Details

Part number:

RF2L16180CB4

Manufacturer:

STMicroelectronics ↗

File Size:

2.43MB

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📄 Datasheet

Description:

Rf power ldmos transistor. The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM

RF2L16180CB4 Application

• Applications
• Large positive and negative gate-source voltage range for improved class C operation
• In compliance with the Europea

TAGS

RF2L16180CB4

STMicroelectronics

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