RF2L16180CB4 - RF power LDMOS transistor

STMicroelectronics

RF2L16180CB4 Datasheet Preview — Preview of RF2L16180CB4 PDF

Datasheet Details

Part number	RF2L16180CB4
Manufacturer	STMicroelectronics ↗
File Size	2.43 MB
Description	RF power LDMOS transistor
Datasheet	RF2L16180CB4-STMicroelectronics.pdf

RF2L16180CB4 Product details

Description

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.

Features

Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched for ease of use.
Optimized for Doherty.

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Published: Mar 14, 2023 |