* Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched for ease of use
* Optimized for Doherty applications
* Large positive
RF2L16180CB4 Datasheet (2.43 MB)
RF2L16180CB4
2.43 MB
Rf power ldmos transistor.
RF2L16180CB4
Datasheet
180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
1 2
5 4 3
B4E
Pin connection
Pin
Connection
1
Drain A
2
Drain B
.
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