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RF2L16180CB4 RF power LDMOS transistor

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Description

RF2L16180CB4 Datasheet 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connection 1 Drain A 2 Drain B .
The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with.

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Features

* Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched for ease of use

Applications

* Large positive and negative gate-source voltage range for improved class C operation
* In compliance with the European Directive 2002/95/EC Applications
* Multicarrier base station

RF2L16180CB4 Distributors

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