RF2L16080CF2 - RF power LDMOS transistor

STMicroelectronics

RF2L16080CF2 Datasheet Preview — Preview of RF2L16080CF2 PDF

Datasheet Details

Part number	RF2L16080CF2
Manufacturer	STMicroelectronics ↗
File Size	1.87 MB
Description	RF power LDMOS transistor
Datasheet	RF2L16080CF2-STMicroelectronics.pdf

RF2L16080CF2 Product details

Description

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally input matched for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the European Directive 2002/95/EC.

📁 RF2L16080CF2 Similar Datasheet

RF2L6S - Super Fast Recovery Diode (Rohm)
RF2001 - SAW Filter (REYCONNS)
RF2001NS2D - Super Fast Recovery Diode (ROHM)
RF2001NS2DFH - Super Fast Recovery Diode (ROHM)
RF2001NS3D - Fast Recovery Diodes (Rohm)
RF2001NS3DFH - Super Fast Recovery Diode (ROHM)
RF2001T2D - Fast Recovery Diode (Rohm)
RF2001T2DFH - Fast Recovery Diode (ROHM)

Other Datasheets by STMicroelectronics

RF2L16180CB4 - RF power LDMOS transistor
RF2L16180CF2 - RF power LDMOS transistor
RF2L15200CB4 - RF power LDMOS transistor
RF2L24280CB4 - RF Power LDMOS transistor
RF2L27015CG2 - RF power LDMOS transistor
RF2L27025CG2 - RF power LDMOS transistor

Published: Mar 14, 2023 |