RF2L16080CF2

RF power LDMOS transistor

STMicroelectronics

RF2L16080CF2 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internally input matched for ease of use

* Large positive and negative gate-source voltage ra

RF2L16080CF2 General Description

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats. DS13222 - Rev 2 - April 2021 For further information co.

RF2L16080CF2 Datasheet (1.87 MB)

RF2L16080CF2 Datasheet Preview — Preview of RF2L16080CF2 PDF

Datasheet Details

Part number:

RF2L16080CF2

Manufacturer:

STMicroelectronics ↗

File Size:

1.87 MB

Description:

Rf power ldmos transistor.
RF2L16080CF2 Datasheet 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor 2 1 3 A2 Pin connection Pin Connection 1 Gate 2 Drain 3 Sourc.

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RF2L16080CF2 power LDMOS transistor STMicroelectronics

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RF2L16080CF2 Features

RF2L16080CF2 General Description

Datasheet Details

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Description:

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