RF2L16080CF2 Datasheet - STMicroelectronics

RF2L16080CF2 RF power LDMOS transistor

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats. DS13222 - Rev 2 - April 2021 For further information co.

RF2L16080CF2 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internally input matched for ease of use

* Large positive and negative gate-source voltage ra

RF2L16080CF2-STMicroelectronics.pdf