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RF2L24280CB4

RF Power LDMOS transistor

RF2L24280CB4 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L24280CB4 2450 MHz 28 V 280 W 13 dB 60%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internally matched pair transistors in push-pull configuration

* Large positive and negative

RF2L24280CB4 General Description

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation. Product status link RF2L24280CB4 Product summary Order co.

RF2L24280CB4 Datasheet (1.12 MB)

Preview of RF2L24280CB4 PDF

Datasheet Details

Part number:

RF2L24280CB4

Manufacturer:

STMicroelectronics ↗

File Size:

1.12 MB

Description:

Rf power ldmos transistor.
RF2L24280CB4 Datasheet 280 W, 28 V, 2.4 to 2.5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain .

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TAGS

RF2L24280CB4 Power LDMOS transistor STMicroelectronics

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