RF2L24280CB4 - RF Power LDMOS transistor

STMicroelectronics

RF2L24280CB4 Datasheet Preview — Preview of RF2L24280CB4 PDF

Datasheet Details

Part number	RF2L24280CB4
Manufacturer	STMicroelectronics ↗
File Size	1.12 MB
Description	RF Power LDMOS transistor
Datasheet	RF2L24280CB4-STMicroelectronics.pdf

RF2L24280CB4 Product details

Description

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L24280CB4 2450 MHz 28 V 280 W 13 dB 60%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched pair transistors in push-pull configuration.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the European directive 2002/95/EC.

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Published: Mar 19, 2023 |